Smoothing treatment of silicon carbide surface using nitrogen trifluoride plasma.
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Accession number;99A0711847
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| Title;Smoothing treatment of silicon carbide surface using nitrogen trifluoride plasma. |
| Author;
TANAKA KENJI
(Doshisha Univ., Fac. of Eng.)
TAKAHASHI KENTARO
(Doshisha Univ., Fac. of Eng.)
TASAKA AKIMASA
(Doshisha Univ., Fac. of Eng.)
OGUMI ZEMPACHI
(Kyoto Univ., Grad. Sch.)
ABE TAKESHI
(Kyoto Univ., Grad. Sch.)
TOJO TETSURO
(Toyo Tanso Co., Ltd.)
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Journal Title;Fusso Kagaku Toronkai Koen Yoshishu
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Journal Code:F0135B
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ISSN:
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VOL.22nd;NO.;PAGE.74-75(1998)
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| Figure&Table&Reference; |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;The Spike were formed on the SiC surface by treatment of reactive ion etching using pure NF3 under pressures higher than 8 Pa and hence, the SiC surface was roughened. Although the SiC sample positioned at various angles against the RF electrode was etched, the Spike grew always in the perpendicular direction to the RF electrode, so that the growth direction of Spike was independent of the crystal face on the SiC substrate. The XPS analysis revealed that surface of Spike was covered with the layer compound of carbon and carbon-fluorine intercalated compounds, which was similar to the surface of SiC treated with thermal fluorination using NF3. Thermogravimetry also indicated that the rate of carbon in SiC with NF3 was slow compared with that of silicone and it was difficult to remove carbon from SiC as a gas compound. The effect of residual gas in the plasma chamber on the flatness of the SiC surface after etching will be also discussed. (author abst.) |
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