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Accession number;99A0471511
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| Title;Thermally Grown Silicon Oxide Films on Silicon Crystal. |
| Author;
WATANABE YOSHIO
(Ntt Busseikagakukisoken)
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Journal Title;Jissen Kyoiku
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Journal Code:L0045A
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ISSN:0912-9111
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VOL.14;NO.2;PAGE.44-47(1999)
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| Figure&Table&Reference;FIG.5, REF.17 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;The reason why LSI can be prepared from silicon is due to the chemical stability of crystal and oxidized cover with ideal properties. The following are explained : PN junction in silicon wafer, formation of insulating film and protection of PN junction, MOS transistor, and preparation method of a thermally oxidized film. The composition and structure of a thermally oxidized film are shown. |
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