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Accession number;99A1007999
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| Title;Neutron capture prompt .GAMMA.-ray spectra of boron thermally diffused in silicon single crystals. |
| Author;
KUBO KEN'YA
(Univ. of Tokyo, Grad. Sch.)
SAKAI YOICHI
(Daido Inst. of Technol.)
JIMBO MUTSUKO
(Daidokodai Zairyogiken)
YONEZAWA CHUSHIRO
(Genken Tokaiken)
MATSUE HIDEAKI
(Genken Tokaiken)
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Journal Title;Abstracts of Papers. Symposium on Radiochemistry
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Journal Code:F0139B
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ISSN:1345-2762
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VOL.43rd;NO.;PAGE.84(1999)
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| Figure&Table&Reference; |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Doppler broadening of the 478keV gamma-ray form 7*Li reveals its deceleration process in materials. We have established a novel method of measureing the Doppler broadened spectrum and obtained apossibility of measuring depth profile of boron in silicon. We confirmed that boron thin film prepared by Ar sputtering evaporates in air with or without heating. Once the film treated at 300 deg under vacuum for 2 hours, the film does not evaporate even heated up to 1000 deg. Spectra of non-treadted sample and heat-treadted at 1000 deg for 8 hours showd remarkabe difference. We concluded the method will be useful for depth profiling of boron in matter. (author abst.) |
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