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Accession number;99A0938086
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| Title;A Study of High Performance Semiconductor Plasma Etching Process. |
| Author;
KOMEDA HIROYUKI
(Tohoku Univ.)
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Journal Title;Record of Electrical and Communication Engineering Conversazione, Tohoku University
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Journal Code:F0511A
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ISSN:0385-7719
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VOL.68;NO.1;PAGE.81-83(1999)
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| Figure&Table&Reference;FIG.3, REF.2 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;The purpose of this study is fabrication of high performance semiconductor plasma etching process for subquarter micron technology and beyond. Especially, contact hole etching process demands low physical damage in addition to high selectivity and minimal charging with a large scale uniform plasma. In this study, mechanism of surface reactions such as fluorocarbon film deposition, plasma-induced damage and micro-loading effect were investigated. And then, key parameters for high performance plasma etching were determined. Furthermore, high performance and low cost contact hole etching technology using a new plasma source called Balanced Electron Drift(BED) magnetron plasma that demonstrates plasma-induced-damage free contact hole etching was developed. (author abst.) |
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