Science Links Japan | Research on Low Temperature Formation of Silicon Thin Film Using Low Energy Ion Bombardment Process.

Research on Low Temperature Formation of Silicon Thin Film Using Low Energy Ion Bombardment Process.

Accession number;99A0938088

Title;Research on Low Temperature Formation of Silicon Thin Film Using Low Energy Ion Bombardment Process.

Author; SHINDO WATARU (Tohoku Univ.)

Journal Title;Record of Electrical and Communication Engineering Conversazione, Tohoku University

Journal Code:F0511A

ISSN:0385-7719

VOL.68;NO.1;PAGE.88-91(1999)

Figure&Table&Reference;FIG.3, TBL.1, REF.12

Pub. Country;Japan

Language;Japanese

Abstract;This dissertation presents low temperature silicon film deposition and highly effective yield management methodologies for deep submicron LSIs. The effects of ion energy, ion flux, and ion species on low temperature (300-350.DEG.C.) silicon thin film deposition utilizing low energy ion bombardment process are investigated. In addition, methodologies for accurate yield prediction and efficient detection of process deterioration based on in-line wafer inspection are presented. (author abst.)

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