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Accession number;99A0938090
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| Title;A Study of Ultra Small Metal-gate SOI Devices. |
| Author;
USHIKI TAKEO
(Tohoku Univ.)
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Journal Title;Record of Electrical and Communication Engineering Conversazione, Tohoku University
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Journal Code:F0511A
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ISSN:0385-7719
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VOL.68;NO.1;PAGE.95-98(1999)
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| Figure&Table&Reference;FIG.4, REF.2 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;A reliable metal-gate silicon-on-insulator(SOI) device technology, which can drastically reduce the number of process steps, has been developed. The use of xenon(Xe) plasma instead of argon(Ar) plasma in tantalum(Ta) film sputtering deposition for gate electrode formation exhibits 1.5 times higher breakdown field and five times higher 50%-charge-to-breakdown (QBD) for gate oxide. Moreover, by using the ultraclean low-temperature processing, Ta-gate fully-depleted-silicon-on-insulator(FDSOI) MOSFET's with 0.15.MU.m gate length have achieved good on/off characteristics. These results demonstrate that metal-gate SOI device technology is promising to use in future 0.1.MU.m design rule GSI's for low cost, low power applications. (author abst.) |
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