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Accession number;99A0938098
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| Title;A Study on Modulation of Submillimeter Wave Radiation. |
| Author;
MINAMIIDE HIROAKI
(Tohoku Univ.)
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Journal Title;Record of Electrical and Communication Engineering Conversazione, Tohoku University
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Journal Code:F0511A
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ISSN:0385-7719
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VOL.68;NO.1;PAGE.126-129(1999)
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| Figure&Table&Reference;FIG.10 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;The modulation of submillimeter wave(SMMW) radiation is demonstrated by laser-produced free carriers in semiconductors and by a Schottky diode (SBD) generating tunable side bands. In the technique using the free carriers, the modulation of 215.MU.m radiation is achieved by irradiating non-doped Si and GaAs wafers with optical pulses of a Q-switched Nd:YAG laser. There are three parameters to characterize the modulation: 1) recombination time of free carriers, 2) penetration depth of optical pulses into semiconductors, and 3) relative direction of the submillimeter and optical waves irradiated onto the semiconductor wafer. The effects of these parameters are theoretically and experimentally examined. This technique is applied to generating submillimeter wave pulses of variable duration, Q-switching optically-pumped SMMW gas laser, and measuring the recombination coefficient and diffusion constant in Si and GaAs wafers. In the technique using the SBD, the modulation degrees in some various AC-bias conditions are examined for 435.MU.m radiation. The measured result qualitatively agrees with the calculation from equivalent circuit for this modulation system. (author abst.) |
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