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Accession number;99A0938100
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| Title;A Study of Lateral Current Confinement in Semiconductor Lasers for Optical Transmission Systems. |
| Author;
NISHI HIROSHI
(Tohoku Univ.)
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Journal Title;Record of Electrical and Communication Engineering Conversazione, Tohoku University
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Journal Code:F0511A
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ISSN:0385-7719
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VOL.68;NO.1;PAGE.134-137(1999)
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| Figure&Table&Reference;FIG.8, REF.2 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;This paper describes lateral current confinements in GaAlAs and InGaAsP double heterostructure(DH) lasers having narrow strip widths (less than 10.MU.m), which are emitting wavelengths of 0.85.MU.m and 1.3.MU.m, respectively. Structures of the current confinement were achieved by diffusing the sulfur selectively into heterostructure layers for GaAlAs lasers, and by growing the buried n-type InGaAsP layer, named an anti-guiding layer, into the p-type InP cladding layer for InGaAsP lasers, respectively. Excellent characteristics such as a low threshold current, a fundamental transverse mode oscillation, a high modulation speed and a long life were obtained. (author abst.) |
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