|
Accession number;99A0938102
|
| Title;A Study of Si-group Gas-Source MBE. |
| Author;
NAKAZAWA HIDEKI
(Tohoku Univ.)
|
Journal Title;Record of Electrical and Communication Engineering Conversazione, Tohoku University
|
Journal Code:F0511A
|
ISSN:0385-7719
|
|
VOL.68;NO.1;PAGE.142-145(1999)
|
| Figure&Table&Reference;FIG.4, TBL.1, REF.2 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Growth kinetics of Si-group Gas-Source MBE using hydride source gases has been studied by surface-hydrogen desorption measurements using Temperature Programmed Desorption(TPD). It was found that hydrogen desorption during Si Gas-Source MBE using silane(SiH4) and disilane(Si2H6) is a first-order reaction process and their activation energies were equaled to that of hydrogen desorption from Si(100) monohydride surface. From studies of adsorption process it was found that at low temperatures the source gases adsorb using 2 adsorption sites, while they use 4 adsorption sites at high temperatures. However, further investigations on the hydrogen desorption process from grown surfaces indicate a difference in the desorption processes between the two source gases. Furthermore, hydrogen desorption tends to show a higher-order process by thermal annealing. SiC on Si Gas-Source MBE using monomethylsilane(SiH3CH3) was found to have an optimum growth condition for surface morphology, crystallization, and stoichiometry. At low temperatures, it was clarified that the surface hydrogen termination degrades the quality of grown films. (author abst.) |
|
|
|
Related Articles;
|
