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Accession number;99A0938103
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| Title;A Study of Fabrication of InAs/GaSb/AlSb Heterostructures and Its Applications to Opto-Electronic Device. |
| Author;
OTANI KEITA
(Tohoku Univ.)
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Journal Title;Record of Electrical and Communication Engineering Conversazione, Tohoku University
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Journal Code:F0511A
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ISSN:0385-7719
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VOL.68;NO.1;PAGE.146-149(1999)
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| Figure&Table&Reference;FIG.6, REF.4 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Since InAs/GaSb/AlSb type-II heterostructure has a unique band lineup such as a type-II broken gap structure (InAs/GaSb) and a large conduction band offset (InAs/AlSb), various opto-electronic device applications have been proposed and realized. Intersubband optical transitions in a quantum well structure have drawn much attention because of the large oscillator strength and the wide tunability range of optical transition from near- to far-infrared. The light source based on intersubband transition in type-II InAs/GaSb/AlSb heterostructure offers a number of advantages over type-I GaAs/AlGaAs and GaInAs/AlInAs material systems in terms of the tunability of wavelength and the contro of carrier transport in the heterostructure. In this paper, we present the first observation of intersubband light emission by electrical pumping. To realize the type-II InAs/GaSb/AlSb intersubband light emitting diode, (I) theoretical consideration of type-II intersubband light emitter, (II) fabrication of high quality heterostructure by a molecular beam epitaxy, and (III) its evaluation by transport and optical measurements are performed. (author abst.) |
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