A Study on Control of Compound Semiconductor Surfaces and Interfaces.
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Accession number;99A0938105
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| Title;A Study on Control of Compound Semiconductor Surfaces and Interfaces. |
| Author;
SHOJI DAISEI
(Tohoku Univ.)
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Journal Title;Record of Electrical and Communication Engineering Conversazione, Tohoku University
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Journal Code:F0511A
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ISSN:0385-7719
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VOL.68;NO.1;PAGE.154-157(1999)
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| Figure&Table&Reference;FIG.7, REF.6 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;The properties of chemically-treated GaAs surfaces and interfaces formed by deposition of metals (Ag,Au,In) and insulator (CaF2) onto the GaAs surfaces have been investigated using synchrotron-radiation photoemission spectroscopy, multiple internal reflection infrared absorption spectroscopy(MIR-IRAS), and x-ray diffraction. It is shown that GaAs surfaces treated with (NH4)2Sx solution are dominantly covered by Ga and As sulfides without native oxides. MIR-IRAS measurements of H2S adsorption onto GaAs show that formation of Ga-S-Ga bridge-bond is more favorable than As-S bond, which would be the origin of chemical passivity of the sulfur (S)-terminated GaAs surface. When Ag, Au are deposited onto the S-terminated surface, As segregation and alloy formation are suppressed. It is demonstrated that CaF2 epitaxially grows on the S-terminated GaAs surface at a substrate temperature of as low as 300.DEG.C., and that there is a lowering of the interface state density brought by epitaxial growth of CaF2 on the GaAs surface. (author abst.) |
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