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Accession number;01A0091271
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| Title;Fabrication of Bi-Te Thermoelectric Device by Spark Plasma Sintering. (III). Applicative Research of Smart Materials for Reducing Mass of Parts. |
| Author;
YAJIMA YOICHI
(Ind. Res. Inst. of Nagano)
YAMAMOTO JUN'ICHI
(Ind. Res. Inst. of Nagano)
FURUHATA HAJIME
(Ind. Res. Inst. of Nagano)
TAKIZAWA HIDEKAZU
(Ind. Res. Inst. of Nagano)
MAKIMURA MIKA
(Ind. Res. Inst. of Nagano)
ANZAWA SHIN'ICHI
(Ind. Res. Inst. of Nagano)
SAKATA RYOJI
(Ind. Res. Inst. of Nagano)
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Journal Title;Naganoken Kogyo Shikenjo Kenkyu Hokoku
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Journal Code:Y0010A
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ISSN:0913-672X
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VOL.;NO.20;PAGE.1-6(2000)
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| Figure&Table&Reference;FIG.18, TBL.1, REF.9 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;To investigate the temperature dependence and the anisotropy of bismuth telluride(Bi-Te) thermoelectric properties, semiconducting ceramics of Bi-Te were prepared by spark plasma sintering(SPS) using milled powders of Bi-Te pollycrystalline ingot. Thermoelectric properties such as resistivity, seebeck coefficient and power factor were measured for the vertical or parallel direction of the SPS press direction over the temperature range from -90.DEG.C. to 145.DEG.C.. As results, thermoelectric properties were dependent on the temperature of measuring atomosphere. Especially the resistivity increased with increasing the temperature. The value of power factor of both P and N type were as large as 3.3*10-2W/m/K2 at 25.DEG.C.. The results suggest that thermoelectric properties exhibit the anisotropy, because they were different for the SPS press directions. Furthermore, the thermoelectric modules were fabricated using Bi-Te sintered bodies to determine their .DELTA.Tmax of 45.DEG.C. at 10A, which was sufficient for practical application. (author abst.) |
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