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Accession number;01A0091277
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| Title;Preparation and Thermoelectric Properties of Boron Thin Films. |
| Author;
MAKIMURA MIKA
(Ind. Res. Inst. of Nagano)
YOSHIMURA TAKUMA
(Shinshu Univ., Fac. of Eng.)
KAMIMURA KIICHI
(Shinshu Univ., Fac. of Eng.)
NAKAO MASATO
(Shinshu Univ., Fac. of Eng.)
ONUMA YOSHIHARU
(Shinshu Univ., Fac. of Eng.)
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Journal Title;Naganoken Kogyo Shikenjo Kenkyu Hokoku
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Journal Code:Y0010A
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ISSN:0913-672X
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VOL.;NO.20;PAGE.42-45(2000)
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| Figure&Table&Reference;FIG.10, TBL.3, REF.5 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Boron thin films were deposited on insulating substrate by electron beam evaporation. Tungsten was doped as an impurity. The thickness of the film was 200-500nm. The electron beam diffraction pattern showed that the films were amorphous. Carbon and oxygen was also detected by XPS measurement. The electrical conductivity of non-doped film increased rapidly from 10-3 to 10.OMEGA./cm when the temperature increased from 300 to 800K. The thermoelectric power was positive value, which indicated that the boron film was p-type semiconductor. The thermoelectric power of non-doped film decreased slowly from 400 to 300.MU.V/K with an increase in temperature from 300 to 800K. The tungsten doping was effective to decrease the resistance of the film. Thermoelectric power of the doped film was one order less than that of non-doped film. The tungsten doping resulted in no increase in thermoelectric figure of merit. (author abst.) |
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