Super-cell Design Based on Statically Substrate-biased Domino CMOS Circuit. I: Cell Layout Architecture with Continuously Variable Transistor Width.

Accession number;01A0340309
Title;Super-cell Design Based on Statically Substrate-biased Domino CMOS Circuit. I: Cell Layout Architecture with Continuously Variable Transistor Width.
Author; AKINO TOSHIRO (Kinki Univ. Seibuturiko Gakubu) SAKAI YOSHINOBU (Kinki Univ. Seibuturiko Gakubu) TAKAHASHI HIRONORI (Kinki Univ. Seibuturiko Gakubu)
Journal Title;IEIC Technical Report (Institute of Electronics, Information and Communication Engineers)
Journal Code:S0532B
ISSN:0913-5685
VOL.100;NO.534(CPSY2000 72-81);PAGE.41-48(2001)
Figure&Table&Reference;FIG.13, REF.7
Pub. Country;Japan
Language;Japanese
Abstract;Using another static substrate-bias [VDD'(>VDD), VSS'(<VSS)] in addition to common power supply [VDD, VSS], we proposed a circuit scheme making the most of pull-up/pull-down transistors with high threshold voltages (VTN', VTP'), which are biased by [VDD', VSS']. Here, the source terminals of these transistors were only connected to the base of [VDD, VSS]. We reduced the area and delay time of domino CMOS circuit by not using the PMOS transistor with low VTP biased by VDD on n-well [1,2]. In this paper, being based on this circuit, we propose the super-cell layout architecture with continuously variable transistor width. We study the circuit performance of area, delay time and power consumption for the inverter and AOI24, compared to their static CMOS circuits, by using a circuit simulator based on the BSIM3v3 model of 0.35.MU.m CMOS process. (author abst.)