|
Accession number;02A0335465
|
| Title;Cubic Boron Nitride p-n Junction Crystals. |
| Author;
TANIGUCHI TAKASHI
(Busshitsu・zairyokenkyukikobusshitsuken)
YAMAOKA NOBUO
(Busshitsu・zairyokenkyukikobusshitsuken)
|
Journal Title;Program and Abstracts of Papers. High Pressure Conference of Japan
|
Journal Code:L1222A
|
ISSN:0917-6373
|
|
VOL.42nd;NO.;PAGE.48(2001)
|
| Figure&Table&Reference;FIG.2, REF.4 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Cubic boron nitride p-n junction crystals were fabricated by temperature gradient method at 4.5?5.5GPa and 1400?1600 .DEG.C. for 40?80 hr. Li3BN2 and Ba3B2N4 were used as catalyst and Be and S elements were doped as acceptor and donor in the crystals, respectively. Current induced UV light emissions were observed at wave length of 200?300nm. The quality of crystal were discussed on the basis with the UV emission properties as well as cathode luminescence study. (author abst.) |
|
|
|
Related Articles;
|
