Atom insertion into the CoSb3 skutterudite host lattice and its thermoelectric properties.

Accession number;02A0335466
Title;Atom insertion into the CoSb3 skutterudite host lattice and its thermoelectric properties.
Author; TAKIZAWA HIROTSUGU (Tohokudai Daigakuinkogakukenkyuka) OKAZAKI KEN'ICHI (Tohokudai Daigakuinkogakukenkyuka) UEDA KYOTA (Tohokudai Daigakuinkogakukenkyuka) ENDO TADASHI (Tohokudai Daigakuinkogakukenkyuka)
Journal Title;Program and Abstracts of Papers. High Pressure Conference of Japan
Journal Code:L1222A
ISSN:0917-6373
VOL.42nd;NO.;PAGE.49(2001)
Figure&Table&Reference;FIG.2, REF.3
Pub. Country;Japan
Language;Japanese
Abstract;Thermoelectric properties of tin- and germanium-filled CoSb3 skutterudites are evaluated. The compounds were synthesized under high pressure and temperature condition from powder mixture of CoSb3 and elemental tin or germanium. The tin- and germanium-filled compounds exhibit n-type semiconducting behavior indicating that the incorporation of atoms causes the formation of a donor level. A remarkable reduction in the thermal conductivity was achieved by tin insertion. Thermal conductivity of the tin-filled sample is two orders of magnitude lower than that of the unfilled CoSb3. Effect of void filling on the thermoelectric properties of SnxCo4Sb12 is compared to that of other filled skutterudites. It is concluded that tin atom is a better "rattler" in the CoSb3 host lattice. (author abst.)