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Accession number;02A0335469
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| Title;Phase transition of CuGaTe2 semiconductor under pressure. |
| Author;
MORI YOSHIHISA
(Okayama Univ. of Sci.)
IKAI TOMOYUKI
(Okayama Univ. of Sci.)
ASANO NORIO
(Okayama Univ. of Sci.)
KOIKE YASUHIRO
(Okayama Univ. of Sci.)
TAKARABE YASUHIRO
(Okayama Univ. of Sci.)
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Journal Title;Program and Abstracts of Papers. High Pressure Conference of Japan
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Journal Code:L1222A
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ISSN:0917-6373
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VOL.42nd;NO.;PAGE.52(2001)
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| Figure&Table&Reference;FIG.2, REF.3 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;High pressure X-ray diffraction measurements were performed on CuGaTe2 chalcopyrite semiconductor up to 18 GPa. The first phase transition occurred at 9.4 GPa, and this new phase was tentatively assigned to a cation disordered zinc-blende (d-ZB) structure. Moreover, the d-ZB phase transformed to a disordered NaCl (d-NaCl) structure at 15.4 GPa. The phase transition from the chalcopyrite to the tentative d-ZB phase was accompanied by a volume reduction of 5 %. On the other hand, the volume reduction from the d-ZB to the d-NaCl phase was 7 %. (author abst.) |
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