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Atomistic structures of ion-implantation-induced amorphous silicon carbide characterized by electron diffraction.

Accession number;02A0383015

Title;Atomistic structures of ion-implantation-induced amorphous silicon carbide characterized by electron diffraction.

Author; BAE I-T (Osaka Univ.) ISHIMARU M (Osaka Univ.) HIROTSU Y (Osaka Univ.) MATSUMURA S (Kyushu Univ.) SICKAFUS K E (Los Alamos Nat'l Lab.)

Journal Title;Abstracts. Meeting of JIM

Journal Code:S0988A

ISSN:1342-5730

VOL.130th;NO.;PAGE.167(2002)

Figure&Table&Reference;

Pub. Country;Japan

Language;English

Abstract;

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