Application of Radioactive Tracer Method on Copper Migration in Semiconductor Lithography.
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Accession number;02A0151793
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| Title;Application of Radioactive Tracer Method on Copper Migration in Semiconductor Lithography. |
| Author;
CHU T-C
(Dep. Nuclear Sci., National Tsing Hua Univ., Taiwan)
KO F-H
(National Nano Device Lab., Taiwan)
HSU C-C
(Dep. Nuclear Sci., National Tsing Hua Univ., Taiwan)
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Journal Title;Abstracts of Papers. Symposium on Radiochemistry
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Journal Code:F0139B
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ISSN:1345-2762
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VOL.45th;NO.;PAGE.12(2001)
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| Figure&Table&Reference; |
| Pub. Country;Japan |
| Language;English |
| Abstract;The radioactive tracer technique of 64Cu was applied to investigate the migration of Cu impurity from ArF and KrF photoresists onto silicon-based underlying substrates of Si(100), Si(110), Si(111), poly-Si, SiO4 and Si3N4. The effects of polymer constituent of photoresist and baking temperature were studied. The migration-adsorption model was proposed to explain the pathway of Cu migration in the photoresist layers. (author abst.) |
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