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Accession number;02A0335462
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| Title;Up-converted photoluminescence in GaAs/ordered GaInP heterointerface structures. |
| Author;
TOMODA HIROAKI
(Grad. Sch. of Sci. and Technol., Kobe Univ.)
PRINS A D
(Queen Mary And Westfield Coll., Univ. London)
KOBAYASHI TOSHIHIKO
(Kobe Univ., Fac. of Eng.)
HONMA YASUHIRO
(Kobe Univ., Fac. of Eng.)
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Journal Title;Program and Abstracts of Papers. High Pressure Conference of Japan
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Journal Code:L1222A
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ISSN:0917-6373
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VOL.42nd;NO.;PAGE.45(2001)
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| Figure&Table&Reference;FIG.2, REF.2 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Up-converted photoluminescence (at-1.9 eV) of GaAs/partially ordered GaInP single quantum well structures, which was excited at photon energies (-1.6 eV) below the band gap of GaInP (-1.9 eV) but above that of GaAs, was studied. Results are compared with the normal photoluminescence data at high pressure, and the possible transition mechanisms are discussed. (author abst.) |
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