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Accession number;02A0335463
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| Title;Heterointerface band-gap pressure coefficients of strained semiconductor layers. |
| Author;
HARADA JUN
(Grad. Sch. of Sci. and Technol., Kobe Univ.)
PRINS A D
(Queen Mary And Westfield Coll., Univ. London)
OBAYASHI TOSHIHIKO
(Kobe Univ., Fac. of Eng.)
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Journal Title;Program and Abstracts of Papers. High Pressure Conference of Japan
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Journal Code:L1222A
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ISSN:0917-6373
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VOL.42nd;NO.;PAGE.46(2001)
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| Figure&Table&Reference;TBL.1, REF.3 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Strained laser structures grown simultaneously on different substrate orientations are measured at high pressure using photoluminescence. Pressure coefficients of band-gap are compared with theoretical predictions. (author abst.) |
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