The characteristics of holographic grating in chalcogenide thin films.
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Accession number;02A0423810
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| Title;The characteristics of holographic grating in chalcogenide thin films. |
| Author;
PARK J-I
(Kwangwoon Univ., Seoul, Kor)
PARK J-H
(Kwangwoon Univ., Seoul, Kor)
SHIN K
(Kwangwoon Univ., Seoul, Kor)
KIM J-W
(Kwangwoon Univ., Seoul, Kor)
LEE Y-J
(Yeojoo Inst. Technol., Kyoungi, Kor)
CHUNG H-B
(Kwangwoon Univ., Seoul, Kor)
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Journal Title;Proceedings of the Symposium on Electrical and Electronic Insulating Materials and Applications in Systems
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Journal Code:G0398B
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ISSN:
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VOL.33rd;NO.;PAGE.145-147(2001)
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| Figure&Table&Reference;FIG.6, REF.6 |
| Pub. Country;Japan |
| Language;English |
| Abstract;We have investigated the polarization dependence of holographic grating in chalcogenide Se75Ge25, As40Ge10Se15S35 thin films. It has been irradiated with linearly polarized He-Ne Laser at 633nm. To observe the characteristic of etching, thin film has been etched with NaOH solution. Film thickness was about 1.MU.m, 3.MU.m, which is monitored with quartz oscillator during deposition and measured with the NKT1200 analyzer. The self-relief grating was formed in As40Ge10Se15S35 thin film. (author abst.) |
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