Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition.
|
Accession number;02A0423811
|
| Title;Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition. |
| Author;
SATO H
(Waseda Univ., Tokyo, Jpn)
KATO H
(Waseda Univ., Tokyo, Jpn)
OHKI Y
(Waseda Univ., Tokyo, Jpn)
SEOL K S
(Riken, Saitama, Jpn)
NOMA T
(Sanyo Electric Co., Ltd., Gunma, Jpn)
|
Journal Title;Proceedings of the Symposium on Electrical and Electronic Insulating Materials and Applications in Systems
|
Journal Code:G0398B
|
ISSN:
|
|
VOL.33rd;NO.;PAGE.148-151(2001)
|
| Figure&Table&Reference;FIG.9, TBL.1, REF.9 |
| Pub. Country;Japan |
| Language;English |
| Abstract; |
|
|
|
Related Articles;
|
|
