Preparation of boron-doped diamond thin films using BF3 and the electrochemical behavior of the semiconducting diamond electrodes.
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Accession number;02A0620398
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| Title;Preparation of boron-doped diamond thin films using BF3 and the electrochemical behavior of the semiconducting diamond electrodes. |
| Author;
OKINO F
(Shinshu Univ., Ueda, Jpn)
KAWASAKI S
(Shinshu Univ., Ueda, Jpn)
TOUHARA H
(Shinshu Univ., Ueda, Jpn)
NISHITANI(GAMO) M
(Univ. Tsukuba, Tsukuba, Jpn)
ANDO T
(Jst-crest, Tsukuba, Jpn)
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Journal Title;Fusso Kagaku Toronkai Koen Yoshishu
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Journal Code:F0135B
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ISSN:
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VOL.25th;NO.;PAGE.5(2001)
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| Figure&Table&Reference; |
| Pub. Country;Japan |
| Language;English |
| Abstract;Boron-doped diamond thin films were prepared using BF3, and the electrochemical behavior of the semiconducting diamond electrodes was investigated. Raman spectra of the films prepared using BF3 indicated that diamond films were indeed doped with boron using BF3. The electrochemical behavior of the films investigated by the cyclic voltammetry of 1,4-difluorobenzene in Et4NF 4.0HF was found to be essentially the same as that of the B-doped diamond electrodes prepared using diborane. (author abst.) |
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