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Accession number;02A0620423
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| Title;Development of alternative gases for semiconductor CVD chamber cleaning. (Report 4). Experimental report of fluorinated inorganic compounds. |
| Author;
OHIRA YUTAKA
(Res. Inst. Innovative Technol. Earth)
YONEMURA TAISUKE
(Res. Inst. Innovative Technol. Earth)
MITSUI YUKI
(Res. Inst. Innovative Technol. Earth)
TAMURA MASANORI
(National Inst. Advanced Industrial Sci. and Technol., JPN)
SEKIYA AKIRA
(National Inst. Advanced Industrial Sci. and Technol., JPN)
TAKAICHI TSUYOSHI
(Res. Inst. Innovative Technol. Earth)
BEPPU TATSURO
(Res. Inst. Innovative Technol. Earth)
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Journal Title;Fusso Kagaku Toronkai Koen Yoshishu
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Journal Code:F0135B
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ISSN:
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VOL.25th;NO.;PAGE.65-67(2001)
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| Figure&Table&Reference; |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;High global warming gases such as N34 or Perfluorocarbons(PFCs) have been widely used to clean plasma-enhanced chemical-vapor deposition(PECVD) process chambers in the semiconductor manufacturing industry. These gases remove silicon dioxide and silicon nitride residues on the interior surfaces of the tools. It is desired to develop high performance gas for the cleaning process whose emission gases have less global warming effect. In this study, some fluorinated inorganic gases (CIF3,F3NO,F2) have been examined with the parallel plate coupled plasma chamber. The cleaning performance was evaluated by the etching rate of SiO2 film on silicon wafer. In these gases, etch rate of F2 in every additive was developed along with concentration and then 100% fluorine gas was the fastest etch rate specie. (author abst.) |
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