Reactive Ion Etching of SiC in NF3 Plasma.
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Accession number;02A0620438
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| Title;Reactive Ion Etching of SiC in NF3 Plasma. |
| Author;
KAI TASUKU
(Doshisha Univ., Grad. Sch.)
SHIMIZU WATARU
(Doshisha Univ., Grad. Sch.)
AKASHI YOSHINAGA
(Doshisha Univ., Grad. Sch.)
TANAKA KENJI
(Doshisha Univ., Grad. Sch.)
ABE TAKESHI
(Kyoto Univ., Graduate School, JPN)
INABA MINORU
(Kyoto Univ., Graduate School, JPN)
OGUMI ZEMPACHI
(Kyoto Univ., Graduate School, JPN)
TOJO TETSURO
(Toyo Tanso Co., Ltd.)
TASAKA AKIMASA
(Doshisha Univ., Grad. Sch.)
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Journal Title;Fusso Kagaku Toronkai Koen Yoshishu
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Journal Code:F0135B
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ISSN:
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VOL.25th;NO.;PAGE.97-99(2001)
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| Figure&Table&Reference;FIG.3, REF.1 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;SiC will be expected as a hopeful semiconductor material in the near future since it has attractive physical properties such as wide band gap, high thermal conductivity and low coefficient of thermal expansion. In the reactive ion etching(RIE) of SiC with NF3, the etching rate was minimum at NF3 pressure of 3Pa. The surface of polished SiC specimen with treatment by RIE under conditions such as NF3 pressure of 1Pa and RF power of 100W remained smooth in the scale of nm within 30 minutes, whereas it became rough in the scale of 20nm over 60 minutes. On the other hand, the SiC surface became carbon-rich by RIE under NF3 pressure higher than 3Pa, because of the reaction of fluorine radicals (F ) with Si on the SiC surface, and the carbon-rich part of SiC surface acted as a micromask to form spikes on it. The species such as N+, N2+, N2, and F radicals were observed in the NF3 plasma by optical emission spectroscopy. The physical etching by N2+ and/or N+ ion under lower NF3 pressures and the chemical etching by F radical under higher NF3 pressures may preferentially occurred, respectively. (author abst.) |
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