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Preparation and Characterization of Narrow-gap GaAsN-based Alloy Semiconductors for Long-wavelength Optoelectronic Devices.

Accession number;03A0051795

Title;Preparation and Characterization of Narrow-gap GaAsN-based Alloy Semiconductors for Long-wavelength Optoelectronic Devices.

Author; UESUGI K (Hokkaido Univ., Sapporo, Jpn) SUEMUNE I (Hokkaido Univ., Sapporo, Jpn)

Journal Title;Abstr RIES Hokudai Symp

Journal Code:L3994A

ISSN:

VOL.3rd;NO.;PAGE.74-75(2001)

Figure&Table&Reference;FIG.6, REF.5

Pub. Country;Japan

Language;English

Abstract;

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