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Ion dose effect on solid phase epitaxial regrowth of silicon carbide.

Accession number;03A0279707

Title;Ion dose effect on solid phase epitaxial regrowth of silicon carbide.

Author; BAE I-T (Osaka Univ.) ISHIMARU M (Osaka Univ.) HIROTSU Y (Osaka Univ.)

Journal Title;Abstracts. Meeting of JIM

Journal Code:S0988A

ISSN:1342-5730

VOL.132nd;NO.;PAGE.327(2003)

Figure&Table&Reference;

Pub. Country;Japan

Language;English

Abstract;

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