Growth and Architecture of Single-Walled Carbon Nanotubes on Patterned Silicon Substrates
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Accession number;04A0185869
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| Title;Growth and Architecture of Single-Walled Carbon Nanotubes on Patterned Silicon Substrates |
| Author;
HOMMA Y
(Ntt Basic Res. Lab., Atsugi-shi, Jpn)
KOBAYASHI Y
(Ntt Basic Res. Lab., Atsugi-shi, Jpn)
OGINO T
(Yokohama National Univ., Yokohama)
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Journal Title;NTT Tech Rev
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Journal Code:F0282C
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ISSN:1348-3447
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VOL.2;NO.2;PAGE.28-35(2004)
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| Figure&Table&Reference;FIG.6, REF.18 |
| Pub. Country;Japan |
| Language;English |
| Abstract;Single-walled carbon nanotubes (SWNTs) were grown on Si and SiO2 patterns to form self-assembled interconnecting networks. The growth was performed by chemical vapor deposition using methane and Fe catalyst. Arrays of Si or SiO2 nano-pillars were prepared using synchrotron-radiation lithography. The SWNT yield was controlled by choosing the catalyst particle size and growth temperature. When the SWNT yield was low, a suspended network of individual SWNTs formed. The bridging SWNTs were fairly straight, but the network density was low. At higher yields, bundles of SWNTs formed, and almost all the pillars were connected in the SWNT bundle network. Suspended SWNTs will be useful for wiring or for the site-selective formation of SWNT-based transistors. They also show enhanced Raman and photoluminescence signals. Thus, suspended SWNTs are of interest for both electronic and optical applications. (author abst.) |
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