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Accession number;04A0306012
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| Title;Stress Migration in Sputter-deposited Aluminum Interconnections for Liquid Crystal Displays |
| Author;
ONISHI TAKASHI
(Kobe Steel, Ltd., JPN)
TAKAGI KATSUTOSHI
(Kobe Steel, Ltd., JPN)
FUJII HIDEO
(Kobelco Res. Inst. Inc., JPN)
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Journal Title;Kobe Steel Engineering Reports
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Journal Code:F0164A
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ISSN:0373-8868
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VOL.54;NO.1;PAGE.52-57(2004)
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| Figure&Table&Reference;FIG.13, REF.48 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;A comprehensive investigation of stress migration phenomena in Al films was carried out to suppress the development of micro voids formed at the Al interconnections of liquid crystal displays. Detailed examinations concerning the relationship between the void formation behavior and residual stress of Al films led to the following results: Al films deform due to Coble creep or a high temperature creep mechanism during the cooling stage of the annealing process, and micro voids are formed by tensile stress, the primary force. Void suppression techniques based on residual stress control and the strengthening of Al interconnections are proposed. (author abst.) |
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