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Accession number;04A0357699
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| Title;Dielectric breakdown mechanism of Hf -silicate high-k gate dielectrics. |
| Author;
SATAKE HIDEKI
(Toshiba Corp.)
YAMAGUCHI TAKESHI
(Toshiba Corp.)
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Journal Title;Transactions of the Institute of Electrical Engineering of Japan. E
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Journal Code:L3098A
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ISSN:1341-8939
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VOL.124;NO.5;PAGE.167-171(2004)
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| Figure&Table&Reference;FIG.7, REF.13 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Dielectric breakdown mechanism of Hf(Hafnium) silecate film has been discussed, on the basis of the temperature dependence of the charge-to-breakdown.nMISFET made using the polysilicon electrode by the self-alignment process was used as a measurement sample.The pretreatment of the silicon substrate used the rare HF processing.A Hf silicate film formed film using the offacsis-sputter method.Charge-to-breakdown was shown temperature dependency,and as high temperature decreases.The activation energy 0.1eV showed experimental result and same value almost in using a SiO2 film as a gate film.The dielectric breakdown model in which the diffusion of hydrogen atom became a rate-determining process was proposed.From absolute value and gate dependence of charge-to-breakdown, it was indicated that the combination which is electrically weak in interface region between Hf silicate and Si substrate was abounding. |
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