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Accession number;04A0357702
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| Title;Development of pressure sensors for high temperature operation. |
| Author;
YOSHITAKE MASAAKI
(Osaka Prefectural Industrial Technology Research Inst.)
NOSAKA TOSHIKAZU
(Osaka Prefectural Industrial Technology Research Inst.)
KUSAKA TADAOKI
(Osaka Prefectural Industrial Technology Research Inst.)
SUZUKI YOSHIHIKO
(Osaka Prefectural Industrial Technology Research Inst.)
TAKENAKA HIROSHI
(Nihonriniakkusu)
SAWAMURA MIKIO
(Nihonriniakkusu)
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Journal Title;Transactions of the Institute of Electrical Engineering of Japan. E
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Journal Code:L3098A
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ISSN:1341-8939
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VOL.124;NO.5;PAGE.183-189(2004)
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| Figure&Table&Reference;FIG.14, TBL.4, REF.8 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;A pressure sensor for use in a high temperature atmosphere(200-250.DEG.C.)has been developed. The pressure sensor consists of Cr-O thin film strain guages,electrode films and oxidation resistance film,which are all sputter and plasma CVD deposited on a metal diaphragm covered with an SiO2 insulator.A Cr-O thin film which was the strain gauge material was made at substrate temperature of 350.DEG.C., and fundamental characteristics of a thin film were examined, and the pressure sensor for the high-temperature operation was developed.It was proven that the fundamental characteristics of composition, specific resistance,and crystal structure of a Cr-O thin film, that it was dependent on the oxygen flow rate in making a thin film and greatly changes.Made Cr-O thin film made under the appropriate condition has the characteristics which they are excellent as pressure sensor in high temperature.In respect of evaluation as oxidation-resistant surface protective film of nonoxide system thin film,non-oxide films such as AIN and Si3N4 keep characteristics of oxidation-resistant by 400.DEG.C.. |
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