Low Temperature Preparation of Functional Oxide Thin Film by Sol-gel-Hydrothermal Process-Application to Si ULSI Monolithic Process for Large-Scale Integrated Sensor, Actuator, and Memory-
|
Accession number;04A0418345
|
| Title;Low Temperature Preparation of Functional Oxide Thin Film by Sol-gel-Hydrothermal Process-Application to Si ULSI Monolithic Process for Large-Scale Integrated Sensor, Actuator, and Memory- |
| Author;
NODA MINORU
(Osaka Univ. Graduate School of Engineering Sci., JPN)
OKUYAMA MASANORI
(Osaka Univ. Graduate School of Engineering Sci., JPN)
|
Journal Title;Transactions of the Institute of Electrical Engineering of Japan. E
|
Journal Code:L3098A
|
ISSN:1341-8939
|
|
VOL.124;NO.6;PAGE.203-206(2004)
|
| Figure&Table&Reference;FIG.8, TBL.1, REF.11 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;The sol-gel-hydrothermal treatment method is one of the methods for being appropriate for the cooling of the oxide film production, and it is a method for treating water instead of high temperature annealing process of the sol-gel method at 200.DEG.C. or less. This combination process has both of advantages of the sol-gel method and hydrothermal synthesis. By combining the sol-gel with the hydrothermal treatment, low-temperature manufacture of 400.DEG.C. or less of the PZT film production was carried out. By the treatment in low temperature and in KOH+Pb(OH)2 solution at 160.DEG.C., the PZT got a thin film of (111) preferred orientation. Good ferroelectricity hysteresis which was sufficiently saturated after the hydrothermal treatment by 4.DEG.C. post-baking was obtained. Simultaneously, the leakage current density the enough low value was obtained, and it seemed to be applicable as a ferroelectrics memory cell capacitor application. |
|
|
|
Related Articles;
|
|
|
