Development of High TCR Platinum Thin Films
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Accession number;04A0505565
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| Title;Development of High TCR Platinum Thin Films |
| Author;
YAMASHITA AKIRA
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
OJI HIROSHI
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
FUKAMI TATSUYA
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
TSUTSUMI KAZUHIKO
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
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Journal Title;Transactions of the Institute of Electrical Engineering of Japan. E
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Journal Code:L3098A
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ISSN:1341-8939
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VOL.124;NO.7;PAGE.242-247(2004)
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| Figure&Table&Reference;FIG.10, REF.5 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;By introducing the alumina layer between Pt thin films and silicon nitride SiN x films, Pt thin films which did not degrade even in heat treatment of 1200.DEG.C. were realized. The alumina film prevents that the platinum combines with SiN x, when it functions as barrier layer. By introducing the alumina layer between Pt thin film and SiNx and heat-treating 1100.DEG.C. in the atmosphere, TCR of 3700 PPM/.DEG.C. was achieved. hough the value of TCR increased by increasing grain size by the heat treatment, it was confirmed that the increase of the content of Pt2Al alloy in the Pt thin film was made to lower the value of TCR. |
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