Ku-Band Silicon Passive Devices Fabricated by Dielectric-Air-Metal (DAM) Cavity Process
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Accession number;04A0719596
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| Title;Ku-Band Silicon Passive Devices Fabricated by Dielectric-Air-Metal (DAM) Cavity Process |
| Author;
YOSHIDA YUKIHISA
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
NISHINO TAMOTSU
(Mitsubishi Electric Corp., Information Technol. R&D Center, JPN)
LEE S-S
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
SUEHIRO YOSHIYUKI
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
MIYAGUCHI KEN'ICHI
(Mitsubishi Electric Corp., Information Technol. R&D Center, JPN)
SODA SHINNOSUKE
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
FUKAMI TATSUYA
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
ISHIDA OSAMI
(Mitsubishi Electric Corp., Information Technol. R&D Center, JPN)
KIMATA MASAFUMI
(Mitsubishi Electric Corp., Advanced Technol. R & D Center, JPN)
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Journal Title;Transactions of the Institute of Electrical Engineering of Japan. E
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Journal Code:L3098A
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ISSN:1341-8939
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VOL.124;NO.10;PAGE.375-380(2004)
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| Figure&Table&Reference;FIG.12, REF.13 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Using the surface finishing process on silicon substrate, dielectric-air-metal(DAM) cavity technology which formed hollow RF passive circuits on the cavity covered with metal film was developed.A grounded coplanar waveguide and a lumped constant type 3dB distributor of the 12GHz correspondence and MEMS switch were produced experimentally.The frequency characteristics and low loss characteristic which coincide with the calculated value were obtained. This technology has the features such as follows.(a)The dielectric loss is small because the substrate is shielded by metal film. (b) It can produce produce by one side processing of the substrate. (c)It can deal with various RF passive circuits by changing the depth of the cavity. |
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