Improvement of the Gas Selectivity of Semiconductor Thin-Film Gas Sensors
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Accession number;04A0815319
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| Title;Improvement of the Gas Selectivity of Semiconductor Thin-Film Gas Sensors |
| Author;
IMAI HIDEKAZU
(Tokyo Denki Univ., Faculty of Engineering)
HARA KAZUHIRO
(Tokyo Denki Univ., Faculty of Engineering)
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Journal Title;Transactions of the Institute of Electrical Engineering of Japan. E
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Journal Code:L3098A
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ISSN:1341-8939
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VOL.124;NO.11;PAGE.421-427(2004)
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| Figure&Table&Reference;FIG.13, REF.13 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Semiconductor thin film gas sensor has good points of available to mass-producing, easy to miniaturizing and possible to multifunctionalization, but have bad point of the gas selectivity.As improvement method of the gas selectivity, the following are studied : Selection of the principal fee and sedimentation of the catalyst material to the principal fee and addition.In this study, the improvement on the gas selectivity was tried by next 3 methods.1)The slight gap faces each other in respect of sensor film and alumina substrates. 2)Alumina substrates which pile up precious metal are made to face the sensor substrate, and catalyst effect by the precious metal is utilized. 3)The perpendicular electric field in the sensor film surface is applied.By 1) and 2) methods, gas selectivity is decided in the sensor production.In 3) method, by switching the polarity of the voltage under work on the gas sensor, the gas selectivity is controlable. |
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