Development on 4 kVA class three phase SiC inverters.
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Accession number;05A0132592
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| Title;Development on 4 kVA class three phase SiC inverters. |
| Author;
OGATA SHUJI
(Kansai Electric Power Co., Inc., JPN)
ASANO KATSUNORI
(Kansai Electric Power Co., Inc., JPN)
TAKAYAMA DAISUKE
(Kansai Electric Power Co., Inc., JPN)
IZAWA TATSURO
(Kansai Electric Power Co., Inc., JPN)
NAKAYAMA KOJI
(Kansai Electric Power Co., Inc., JPN)
OKADA SHIN'ICHI
(Kansai Electric Power Co., Inc., JPN)
SUGAWARA YOSHITAKA
(Kansai Electric Power Co., Inc., JPN)
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Journal Title;R&D News Kansai
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Journal Code:L0171A
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ISSN:0913-4352
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VOL.;NO.420;PAGE.16-17(2004)
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| Figure&Table&Reference;FIG.6 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Here was introduced an inverter using SiC commutation gate turn-off thyrister (SICGT). Switching speed of SICGT is faster than that of silicon GTO and is almost equal to that of silicon IBGT, its on-voltage is lower than that of silicon elements at high current density area, and its voltage resistance is almost equal to that of GTO. Here were shown features of a inverter with4 kVA in rating, 2 kHz in switching frequency, and 240 V in output, inversely parallel jointing an SICGT element with a diode. |
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