Interface Control between Pentacene Film and Si(001) by Chemisorbed Buffer Monolayer
|
Accession number;05A0303240
|
| Title;Interface Control between Pentacene Film and Si(001) by Chemisorbed Buffer Monolayer |
| Author;
WAKATSUCHI M
(Riken (inst. Of Physical And Chemical Res.), Saitama, Jpn)
KATO H S
(Riken (inst. Of Physical And Chemical Res.), Saitama, Jpn)
YAMADA T
(Riken (inst. Of Physical And Chemical Res.), Saitama, Jpn)
KAWAI M
(Riken (inst. Of Physical And Chemical Res.), Saitama, Jpn)
|
Journal Title;Jpn J Appl Phys Part 1
|
Journal Code:G0520B
|
ISSN:0021-4922
|
|
VOL.44;NO.1B;PAGE.514-518(2005)
|
| Figure&Table&Reference;FIG.4, TBL.1, REF.25 |
| Pub. Country;Japan |
| Language;English |
| Abstract;Pentacene films were fabricated by molecular beam deposition on two silicon (Si) substrates. One of the substrates was Si(001) with a chemisorbed 1,4-cyclohexadiene surfactant buffer and the other was Si(001) with a SiO2 oxide layer. The 1,4-cyclohexadiene buffered surface was characterized by high-resolution electron energy loss spectroscopy (HREELS). 1,4-cyclohexadiene molecules were adsorbed on the clean Si(001) (2*1) substrate forming Si-C covalent bonds at 300 K and a well-ordered (2*1) structure was preserved even after adsorption of the molecules. The chemisorbed 1,4-cyclohexadiene layer is thermally stable at approximately room temperature. The morphology and crystallinity of the pentacene films were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, respectively. The AFM images showed larger grains exceeding 1 .MU.m for the pentacene film deposited on the Si(001) substrate with 1,4-cyclohexadiene buffer, whereas the small grains of 200 nm on average were observed for the film on Si(001) with SiO2 under the same deposition rate and substrate temperature. (author abst.) |
|
|
|
Related Articles;
|
|
|
