Intrinsic Electronic Transport through Alkanedithiol Self-Assembled Monolayer
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Accession number;05A0303242
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| Title;Intrinsic Electronic Transport through Alkanedithiol Self-Assembled Monolayer |
| Author;
LEE T
(Yale Univ., Ct, Usa)
WANG W
(Yale Univ., Ct, Usa)
REED M A
(Yale Univ., Ct, Usa)
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Journal Title;Jpn J Appl Phys Part 1
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Journal Code:G0520B
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ISSN:0021-4922
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VOL.44;NO.1B;PAGE.523-529(2005)
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| Figure&Table&Reference;FIG.8, TBL.1, REF.38 |
| Pub. Country;Japan |
| Language;English |
| Abstract;Electronic transport through an alkanedithiol self-assembled monolayer (SAM) is investigated using a nanometer scale device. Temperature-independent current-voltage characteristics are observed, indicating tunneling is the main conduction mechanism. The measured current-voltage characteristics are analyzed with a metal-insulator-metal tunneling model. The inelastic electron tunneling spectroscopy (IETS) study on the octanedithiol device clearly shows the vibrational signatures of molecules. The pronounced IETS peaks correspond to vibrational modes perpendicular to the junction interface, which include the stretching modes of Au-S (at 33 mV) and C-C (at 133 mV), and wagging mode of CH2 (at 158 mV). Intrinsic linewidths are determined as 1.69 (upper limit), 3.73 .+-. 0.98, and 13.5 .+-. 2.4 meV for Au-S, C-C streching modes, and CH2 wagging mode, respectively. The observed peak intensities and peak widths are in good agreement with theoretical predictions. (author abst.) |
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