Poly(3-hexylthiophene) Field-Effect Transistor with Controllable Threshold Voltage
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Accession number;05A0303264
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| Title;Poly(3-hexylthiophene) Field-Effect Transistor with Controllable Threshold Voltage |
| Author;
NISHIMURA H
(Chiba Univ., Chiba, Jpn)
IIZUKA M
(Chiba Univ., Chiba, Jpn)
SAKAI M
(Chiba Univ., Chiba, Jpn)
NAKAMURA M
(Chiba Univ., Chiba, Jpn)
KUDO K
(Chiba Univ., Chiba, Jpn)
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Journal Title;Jpn J Appl Phys Part 1
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Journal Code:G0520B
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ISSN:0021-4922
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VOL.44;NO.1B;PAGE.621-625(2005)
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| Figure&Table&Reference;FIG.10, REF.7 |
| Pub. Country;Japan |
| Language;English |
| Abstract;Poly(3-hexylthiophene) field-effect transistors (P3HT-FETs) have been prepared by an electric-field casting method. P3HT was cast onto a substrate with source and drain electrodes in nitrogen atmosphere saturated with CHCl3 vapor. An electric-field was applied between the electrodes during film formation. Thermal treatment and electric-field application were performed after film formation to control the device parameters. The threshold voltage (Vth) of P3HT-FETs without electric-field application during film formation was almost invariable after the thermal treatment. On the other hand, the Vth of P3HT-FETs formed with electric-field application can be controlled using thermal treatment. The device parameters can also be controlled by a post-electric-field application. These variations are a result of the doping or dedoping of O2. Two types of inverter showing different inversion points were fabricated using such controlled P3HT-FETs. (author abst.) |
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