Interface Characteristics between Au Electrode and Pentacene Layer in Organic Thin-film Transistors
|
Accession number;05A0303270
|
| Title;Interface Characteristics between Au Electrode and Pentacene Layer in Organic Thin-film Transistors |
| Author;
PARK J
(Hongik Univ., Seoul, Kor)
KANG S I
(Hongik Univ., Seoul, Kor)
JANG S P
(Hongik Univ., Seoul, Kor)
CHOI J S
(Hongik Univ., Seoul, Kor)
|
Journal Title;Jpn J Appl Phys Part 1
|
Journal Code:G0520B
|
ISSN:0021-4922
|
|
VOL.44;NO.1B;PAGE.648-651(2005)
|
| Figure&Table&Reference;FIG.5, TBL.2, REF.7 |
| Pub. Country;Japan |
| Language;English |
| Abstract;In order to investigate interfacial characteristics between top-Au and pentacene layers, devices with the structure of bottom-Au/pentacene/top-Au were fabricated on glass substrates at various deposition rates of top-Au of about 1.0, 3.0 and 15.0 .ANGS./s. It was observed that electrical characteristics could be improved by increasing the deposition rate of top-Au, and the highest electrical conductivity value, 1.5*10-6 S/cm, was obtained for the device with top-Au deposited at 15.0 .ANGS./s. Auger electron spectroscopy (AES) results showed that the atomic content of Au is substantially increased with the deposition rate of top-Au, but there is no marked difference in the depth profile of Au atoms regardless of the deposition rate of top-Au. Likewise, field-emission scanning electron microscopy (FE-SEM) images did not reveal structural defects that might cause short circuit. We also fabricated top-contact organic thin-film transistors (OTFTs) at various deposition rates of the Au layer for source/drain electrodes. As a result, the performance of the OTFTs can be modified by the deposition rate of Au. These results will be discussed. (author abst.) |
|
|
|
Related Articles;
|
|
|
