Organic Thin-Film Transistors Based on Vapor-Deposition Polymerized Gate Insulators
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Accession number;05A0303271
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| Title;Organic Thin-Film Transistors Based on Vapor-Deposition Polymerized Gate Insulators |
| Author;
PYO S W
(Hong-ik Univ., Seoul, Kor)
LEE D H
(Hong-ik Univ., Seoul, Kor)
KOO J R
(Hong-ik Univ., Seoul, Kor)
KIM J H
(Gracel Corp. Seoul, Kor)
SHIM J H
(Gracel Corp. Seoul, Kor)
KIM Y K
(Hong-ik Univ., Seoul, Kor)
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Journal Title;Jpn J Appl Phys Part 1
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Journal Code:G0520B
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ISSN:0021-4922
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VOL.44;NO.1B;PAGE.652-655(2005)
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| Figure&Table&Reference;FIG.7, REF.11 |
| Pub. Country;Japan |
| Language;English |
| Abstract;In this study, we demonstrated that organic thin-film transistors (OTFTs) can be fabricated by using organic gate insulators using a vapor deposition polymerization (VDP) process. We found that electrical output characteristics in our organic thin-film transistors using a staggered-inverted top-contact structure show a saturated slope in the saturation region and a subthreshold nonlinearity in the triode region. The field-effect mobility, threshold voltage, and on-off current ratio of OTFTs using 4,4'-oxydiphthalic anhydride[ODPA]-4,4'-oxydianiline[ODA] and 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride[6FDA]-[ODA] as gate insulators with a thickness of 0.45 .MU.m were about 0.13-0.5 cm2/Vs, -7 V, and 104, respectively. To form polyimide as a gate insulator, the VDP process was also introduced instead of a spin-coating process, in which a polyimide film was codeposited by the high-vacuum thermal evaporation of ODPA and ODA, 6FDA and ODA, and cured at 150.DEG.C. for 1 h followed by 200.DEG.C. for 1 h after codeposition. To explain the differences in the electrical characteristics caused by the insulators, the morphology of pentacene on the polyimide from ODPA-ODA was compared with that from 6FDA-ODA, respectively. (author abst.) |
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