Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH3
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Accession number;05A0303276
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| Title;Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH3 |
| Author;
LIU Y
(Shinshu Univ., Nagano, Jpn)
HASHIMOTO S
(Shinshu Univ., Nagano, Jpn)
ABE K
(Shinshu Univ., Nagano, Jpn)
HAYASHIBE R
(Shinshu Univ., Nagano, Jpn)
YAMAKAMI T
(Shinshu Univ., Nagano, Jpn)
NAKAO M
(Shinshu Univ., Nagano, Jpn)
KAMIMURA K
(Shinshu Univ., Nagano, Jpn)
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Journal Title;Jpn J Appl Phys Part 1
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Journal Code:G0520B
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ISSN:0021-4922
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VOL.44;NO.1B;PAGE.673-676(2005)
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| Figure&Table&Reference;FIG.6, TBL.1, REF.10 |
| Pub. Country;Japan |
| Language;English |
| Abstract;The nitride layers were prepared by direct thermal nitridation of 6H-SiC substrates at 1200-1570.DEG.C. in a NH3 atmosphere. The layer was characterized by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman scattering spectroscopy. The thickness of the nitride layers prepared at lower than 1400.DEG.C. was estimated to be less than 10 nm. The higher nitridation temperature resulted in the formation of a thicker surface layer. XPS measurement showed that the surface layer was composed of N, Si, C and O. Peaks corresponding to .ALPHA.-Si3N4 were detected in the Raman spectra and the XRD patterns of the sample prepared at higher than 1500.DEG.C., indicating the crystallization of the nitrided layer. (author abst.) |
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