Growth Temperature Dependence of SrTiO3 Thin Films by Molecular Beam Epitaxy
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Accession number;05A0303277
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| Title;Growth Temperature Dependence of SrTiO3 Thin Films by Molecular Beam Epitaxy |
| Author;
BHUIYAN M N K
(Toyama Univ., Toyama, Jpn)
KIMURA H
(Toyama Univ., Toyama, Jpn)
TAMBO T
(Toyama Univ., Toyama, Jpn)
TATSUYAMA C
(Toyama Univ., Toyama, Jpn)
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Journal Title;Jpn J Appl Phys Part 1
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Journal Code:G0520B
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ISSN:0021-4922
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VOL.44;NO.1B;PAGE.677-680(2005)
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| Figure&Table&Reference;FIG.7, REF.22 |
| Pub. Country;Japan |
| Language;English |
| Abstract;The effect of Sr deposition on the chemically formed SiO2 layer of Si(001) substrates and consequently the growth of SrTiO3 thin films on the Si(001)-Sr(2*1) surface have been studied using reflection high-energy electron diffraction (RHEED), X-ray diffraction and atomic force microscopy. After Sr deposition on the chemically formed SiO2/Si surface, a stable and well ordered Si(001)-Sr(2*1) surface is formed. The SrTiO3 film grown on the reconstructed Si(001)-Sr(2*1) surface at 350.DEG.C. is amorphous. The sharp, streaky RHEED patterns and the strong STO (002) diffraction peaks and the smooth surface with root mean square roughness of approximately 4 .ANGS. suggest that high-quality SrTiO3 films are fabricated at temperatures (400-500.DEG.C.) using molecular oxygen in molecular beam epitaxy. (author abst.) |
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