Improvement in Crystallinity of ZnO Films Prepared by rf Magnetron Sputtering with Grid Electrode
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Accession number;05A0303279
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| Title;Improvement in Crystallinity of ZnO Films Prepared by rf Magnetron Sputtering with Grid Electrode |
| Author;
YASUI K
(Nagaoka Univ. Technol., Niigata, Jpn)
PHUONG N V
(Nagaoka Univ. Technol., Niigata, Jpn)
KUROKI Y
(Nagaoka Univ. Technol., Niigata, Jpn)
TAKATA M
(Nagaoka Univ. Technol., Niigata, Jpn)
AKAHANE T
(Nagaoka Univ. Technol., Niigata, Jpn)
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Journal Title;Jpn J Appl Phys Part 1
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Journal Code:G0520B
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ISSN:0021-4922
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VOL.44;NO.1B;PAGE.684-687(2005)
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| Figure&Table&Reference;FIG.8, REF.18 |
| Pub. Country;Japan |
| Language;English |
| Abstract;ZnO films were prepared on Si and quartz substrates by rf magnetron sputtering with a mesh grid electrode. The influence of a negative grid bias on the crystallinity and optical property of ZnO films was investigated. At an appropriate dc grid bias, ZnO films with good crystallinity were grown from room temperature to 300.DEG.C.. The number of stacking faults, which were observed in the X-ray diffraction spectra of the films deposited without the grid electrode, decreased in the films deposited with the grid electrode. All ZnO films showed a high transmittance in the visible region. (author abst.) |
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