Nano-pattern profile control technology using reactive ion etching
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Accession number;06A0822842
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| Title;Nano-pattern profile control technology using reactive ion etching |
| Author;
FUJIMURA MEGUMI
(Pioneer Corp., JPN)
HOSODA YASUO
(Pioneer Corp., JPN)
KATSUMURA MASAHIRO
(Pioneer Corp., JPN)
KOBAYASHI MASAKI
(Pioneer Corp., JPN)
KITAMURA HIROAKI
(Pioneer Corp., JPN)
HASHIMOTO KAZUNOBU
(Pioneer Corp., JPN)
KASONO OSAMU
(Pioneer Corp., JPN)
IIDA TETSUYA
(Pioneer Corp., JPN)
KURIYAMA KAZUMI
(Pioneer Corp., JPN)
YOKOGAWA FUMIHIKO
(Pioneer Corp., JPN)
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Journal Title;Pioneer R&D
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Journal Code:L0992B
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ISSN:1346-7468
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VOL.16;NO.2;PAGE.1-6(2006)
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| Figure&Table&Reference;FIG.8, TBL.4, REF.9 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;We have developed an electron beam recorder (EBR) and studied a process technology for high-density optical disc mastering. In this study, we aimed at controlling a nano-pattern profile by adopting inductively coupled plasma reactive ion etching (ICP-RIE) under simple conditions for good productivity. To control the pattern inclination angle, we introduced an etching power ratio of antenna power to bias power and investigated the relationship. From the results of our investigation, it was confirmed that inclination angle depended on etching power ratio linearly. Furthermore, in the case of a 100GB read-only memory (ROM) equivalent pattern, we formed two kinds of inclined pattern by adopting ICP-RIE. We evaluated line edge roughness (LER) to determine the difference in pit profile accurately. As a result, it was confirmed that LER was improved at a steep inclination angle. In addition, we applied ICP-RIE to a 300GB ROM pattern. (author abst.) |
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