|
Accession number;05A0249019
|
| Title;Phase field analyses of silicon facet crystal growth from a melt of a Si alloy. |
| Author;
OZONO KENGO
(Univ. Tokyo, Graduate School of Engineering, JPN)
SUZUKI TOSHIO
(Univ. Tokyo, Graduate School of Engineering, JPN)
|
Journal Title;Current Advances in Materials and Processes
|
Journal Code:X0994A
|
ISSN:0914-6628
|
|
VOL.18;NO.1;PAGE.P3(2005)
|
| Figure&Table&Reference;FIG.2, REF.2 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;The phase field equations with changing interfacial energy to be applicable to stable and unstable interfacial orientation regions are applied for analyzing the titled analysis. The objects of the analysis are Si-10wt%Ni and Si-20wt%Ni alloys, and the parameters obtained by the thin interface limit are used for the analyses, and results obtained show that the crystal growth interfacial morphology is completely dendritic, and the growth rate agrees well with observed growth rate for acicular crystal growth. |
|
|
|
Related Articles;
|
