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Accession number;07A0043209
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| Title;Correlation between thermal diffusivity and crystalline in transparent conductive oxide films |
| Author;
ASHIDA TOORU
(Aodai)
YAGI TAKASHI
(National Inst. Advanced Industrial Sci. and Technol., JPN)
TAKETOSHI NAOYUKI
(National Inst. Advanced Industrial Sci. and Technol., JPN)
BABA TETSUYA
(National Inst. Advanced Industrial Sci. and Technol., JPN)
MIYAMURA AMIKA
(Aodai)
SATO YASUSHI
(Aodai)
SHIGESATO YUZO
(Aodai)
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Journal Title;Thermophys Prop
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Journal Code:X0031A
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ISSN:0911-1743
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VOL.27th;NO.;PAGE.21-23(2006)
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| Figure&Table&Reference;FIG.6, REF.7 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;Thermal diffusivity of tin doped indium oxide (ITO) and indium zinc oxide (IZO) thin films with a thickness of 200nm have been measured using a nanosecond thermoreflectance system. Three layered structure such as ITO and IZO films sandwiched by molybdenum (Mo) films were prepared on fused silica substrate by dc magnetron sputtering using ITO, IZO and Mo multi-targets. For the sputtering gas, Ar-O2 mixture gas was used. During the deposition process of the ITO and IZO layers, oxygen flow rate was maintained from 0 to 5% in order to change the electrical conductivity. All as-deposited films exhibit amorphous phase, and ITO films among them were annealed to be crystallized. The thermal diffusivity of crystalline films is twice higher than that of amorphous films. The thermal diffusivity of amorphous and crystal thin films increase proportionally as electrical conductivity increases from 1*10'5'Sm'-1', which implies that heat conduction mechanism of the TCO films is as same as that of metallic behavior above 1*10'5'Sm'-1'. On the other hand, below 1*10'5'Sm'-1' there was little change in the thermal diffusivity. (author abst.) |
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