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Accession number;07A0043216
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| Title;MEASUREMENT OF THE INTERFACIAL THERMAL RESISTANCE OF THERMALLY-OXIDIZED SiO2 FILMS BY A THERMO-REFLECTANCE TECHNIQUE |
| Author;
KATO RYOZO
(Arubakkuriko)
HATTA ICHIRO
(Fukui Univ. Technol., JPN)
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Journal Title;Thermophys Prop
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Journal Code:X0031A
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ISSN:0911-1743
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VOL.27th;NO.;PAGE.42-44(2006)
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| Figure&Table&Reference;FIG.1, TBL.3, REF.12 |
| Pub. Country;Japan |
| Language;Japanese |
| Abstract;This paper describes the development of a method to measure the normal-to-plane thermal conductivity of a very thin electrically-insulating film on a substrate. In this method a metal film, which is deposited on the thin film, is Joule heated periodically and the ac-temperature response at the center of the metal film surface is measured by a thermo-reflectance technique. In this method the one-dimensional thermal conduction model is applied to the metal/film/substrate system. The thermal conductivities of the thermally-oxidized SiO2 films obtained in this study coincide with that of VAMAS TWA23 within .+-.4%. In this study we also tried to estimate the interfacial thermal resistance between the thermally-oxidized SiO2 film and the silicon wafer. We examined the difference of the apparent thermal resistances of the thermally-oxidized SiO2 film with the gold film deposited by two different methods. It is concluded that the rf-sputtering produces a significant thermal resistance (20.+-.4.5*10'-9'm'2' K W'-1') between the gold film and the thermally-oxidized SiO2 film, but the evaporation does no significant interfacial thermal resistance (less than .+-.4.5*10'-9'm'2' K W'-1'). The apparent interfacial thermal resistances between the thermally-oxidized SiO2 film and the silicon wafer were found to scatter significantly (.+-.9*10'-9'm'2' K W'-1') around a very small thermal resistance (less than .+-.4.5*10'-9'm'2' K W'-1'). (author abst.) |
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