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Radical chemical vapor deposition of vertically aligned CNTs at low temperatures using size-classified Co particles for LSI interconnects

Accession number;07A0247406

Title;Radical chemical vapor deposition of vertically aligned CNTs at low temperatures using size-classified Co particles for LSI interconnects

Author; YOKOYAMA DAISUKE (Waseda Univ., Tokyo, Jpn) IWASAKI TAKAYUKI (Waseda Univ., Tokyo, Jpn) YOSHIDA TSUYOSHI (Waseda Univ., Tokyo, Jpn) SATO SHINTARO (Mirai-selete, Atsugi, Jpn) NIHEI MIZUHISA (Mirai-selete, Atsugi, Jpn) AWANO YUJI (Mirai-selete, Atsugi, Jpn) KAWARADA HIROSHI (Waseda Univ., Tokyo, Jpn)

Journal Title;Abstracts. Fullerene, Nanotubes General Symposium

Journal Code:L1472A

ISSN:

VOL.32nd;NO.;PAGE.42(2007)

Figure&Table&Reference;

Pub. Country;Japan

Language;English

Abstract;

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